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Freescale Semiconductor Technical Data
Document Number: MW7IC2425N Rev. 0, 3/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications. * Typical CW Performance: VDD = 28 Volts, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 Watts CW, f = 2450 MHz Power Gain -- 27.7 dB Power Added Efficiency -- 43.8% * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW Output Power Features * Qualified Up to a Maximum of 28 VDD Operation * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) * Integrated ESD Protection * Excellent Thermal Stability * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
2450 MHz, 25 W CW, 28 V LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC2425NR1
CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC2425GNR1
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC2425NBR1
VDS1 RFin RFout/VDS2
GND VDS1 NC NC NC RFin NC VGS1 VGS2 VDS1 GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
RFout/VDS2
VGS1 VGS2 VDS1
Quiescent Current Temperature Compensation (1)
13 12
NC GND
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Input Power
(1,2)
Symbol VDS VGS VDD Tstg TC TJ Pin
Value - 0.5, +65 - 0.5, +10 32, +0 - 65 to +150 150 225 20
Unit Vdc Vdc Vdc C C C dBm
Table 2. Thermal Characteristics (In Freescale Narrowband Test Fixture)
Characteristic Thermal Resistance, Junction to Case (Case Temperature 80C, Pout = 25 W CW) Stage 1, 28 Vdc, IDQ1 = 55 mA Stage 2, 28 Vdc, IDQ2 = 195 mA Symbol RJC Value (2,3) 6.1 1.2 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Stage 1 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 55 mA) (4) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 55 mAdc) (4,5) VGS(th) VGS(Q) VGG(Q) 1.2 -- 10.3 1.9 2.7 11.2 2.7 -- 12.6 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. Measured in Freescale Narrowband Test Fixture. 5. See Appendix A for functional test measurements and test fixture. (continued)
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Stage 2 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 80 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 195 mAdc) (1) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 195 mAdc) (1,2) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 800 mAdc) Stage 2 - Dynamic Characteristics (3) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 111 -- pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 9.5 0.15 1.9 2.7 10.5 0.47 2.7 -- 11.5 0.8 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Narrowband Performance Specifications (4) (In Freescale Narrowband Test Fixture,(2) 50 ohm system) VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 W CW, f = 2450 MHz Power Gain Power Added Efficiency Input Return Loss
(2)
Gps PAE IRL
25.5 41.5 --
27.7 43.8 - 18
30.5 -- - 10
dB % dB
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. Gps PAE PAR ACPR IRL 25.5 15 -- -- -- 28.5 17 9 - 50 - 15 30.5 -- -- - 46 - 10 dB % dB dBc dB
Measured in Freescale Narrowband Test Fixture. See Appendix A for functional test fixture documentation. Part internally matched both on input and output. Measurement made with device in straight lead configuration before any lead forming operation is applied.
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 3
VDD1 C17 C9 C8
VD2 C16 C15
B1 28 V
C14 C7 1 2 3 4 5 Z1 Z2 Z3 C4 C5 C6 VG1 R4 VG2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.500 0.075 1.640 0.100 0.151 0.025 0.100 0.306 x 0.027 x 0.127 x 0.027 x 0.042 x 0.268 x 0.268 x 0.056 x 0.056 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.056 Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13* Z14 PCB 0.040 x 0.061 Microstrip 0.020 x 0.050 Microstrip 0.050 x 0.050 Microstrip 0.050 x 0.027 Microstrip 0.338 x 0.020 Microstrip 1.551 x 0.027 Microstrip Rogers R04350B, 0.0133, r = 3.48 R5 R6 C2 C3 C1 Z4 6 C11 7 NC 8 9 10 11 NC C10 Quiescent Current Temperature Compensation NC NC NC NC 14 Z5 Z6 Z7 Z8 Z9 Z10 Z11 DUT NC 16 NC 15 Z13 Z12 Z14 C13 C12
RF INPUT
RF OUTPUT
NC 13 NC 12
* Line length includes microstrip bends
Figure 3. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Schematic Table 6. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Designations and Values
Part B1 C1, C4, C7, C12, C15 C2, C5, C8, C13 C3, C6, C9, C14 C10 C11 C16, C17 R1, R4 R2, R3, R5, R6 Description 47 , 100 MHz Short Ferrite Bead 6.8 pF Chip Capacitors 10 nF Chip Capacitors 1 F, 50 V Chip Capacitors 2.4 pF Chip Capacitor 3.3 pF Chip Capacitor 10 F, 50 V Chip Capacitors 12 K, 1/4 W Chip Resistors 1 K, 1/4 W Chip Resistors Part Number 2743019447 ATC600S6R8CT250XT C0603C103J5RAC GRM32RR71H105KA01B ATC600S2R4BT250XT ATC600S3R3BT250XT GRM55DR61H106KA88B CRCW12061202FKEA CRCW12061001FKEA Manufacturer Fair - Rite ATC Kemet Murata ATC ATC Murata Vishay Vishay
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 4 RF Device Data Freescale Semiconductor
MW7IC2425N Rev. 1
B1
C17 C8 C7 C4 R4 R5 C5 R6 C1 C2 VG1 R1 VG2 R2 R3 C6 C9
C15 C14 C13 CUT OUT AREA
C16 C12
C10
C11
C3
Figure 4. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Layout
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS -- NARROWBAND
30 50 PAE, POWER ADDED EFFICIENCY (%) 49 48 Pout, OUTPUT POWER (dBm) 47 P1dB = 44.5 dBm (28.05 W) 46 45 Actual 44 43 42 41 13 14 15 16 17 18 19 20 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ1 = 55 mA IDQ2 = 195 mA, f = 2450 MHz Ideal P3dB = 44.9 dBm (30.9 W)
Gps, POWER GAIN (dB)
29
40
28
30
27 VDD = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 1 10 Pout, OUTPUT POWER (WATTS) CW
20
26
10
25
0 100
Figure 5. Power Gain and Power Added Efficiency versus CW Output Power
30
Figure 6. CW Output Power versus Input Power
50 PAE, POWER ADDED EFFICIENCY (%) PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
29 VD1 = 32 V 28 30 V 27 28 V 26 VD2 = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 0.1 1 10
40
30
20
10
25
0 100
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VD1
30 28 V 30 V 32 V 30 VD2 = 28 V 27 30 V 32 V 26 VD1 = 28 Vdc IDQ1 = 55 mA IDQ2 = 195 mA f = 2450 MHz 1 10 20 50
Gps, POWER GAIN (dB)
29
40
28
10
25 0.1
0 100
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VD2
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- NARROWBAND
30 50 IDQ1 varied from 45 mA to 65 mA 40 in 5 mA steps IDQ1 = 65 mA 60 mA 55 mA 50 mA 45 mA 30
Gps, POWER GAIN (dB)
29
28
27
20 VDD = 28 Vdc 10 IDQ2 = 195 mA f = 2450 MHz 0 100
26
25 1 10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added Efficiency versus CW Output Power as a Function of IDQ1
29 50 PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
28
215 mA 195 mA
IDQ2 = 235 mA
40
175 mA 27 155 mA IDQ2 varied from 155 mA to 235 mA in 20 mA steps VDD = 28 Vdc IDQ1 = 55 mA f = 2450 MHz 1 10 Pout, OUTPUT POWER (WATTS) CW
30
26
20
25
10 100
Figure 10. Power Gain and Power Added Efficiency versus CW Output Power as a Function of IDQ2
109 108 MTTF (HOURS) 107 2nd Stage 1st Stage
106 105
104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 25 W CW, and PAE = 43.8%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 11. MTTF versus Junction Temperature MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 7
PAE, POWER ADDED EFFICIENCY (%)
Zo = 50
Zload f = 2450 MHz Zsource f = 2450 MHz
VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 W CW f MHz 2450 Zsource W 32 - j6.256 Zload W 6.2 - j1.17
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance -- Narrowband
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
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MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 17
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages * AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Mar. 2009 * Initial Release of Data Sheet Description
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 18 RF Device Data Freescale Semiconductor
APPENDIX A MW7IC2425NR1/GNR1/NBR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA
MW7IC2725N Rev. 1.3
B1
C17 C8 C7 C4 C5 R4 R5 C1 R6 C9
C16 C15 C14 C13 CUT OUT AREA C12
C2
C10
C11
VG1 R1 VG2 R2 R3
C6 C3
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
0.500 0.075 1.640 0.100 0.151 0.025 0.050 0.356
x 0.027 x 0.127 x 0.027 x 0.042 x 0.268 x 0.268 x 0.056 x 0.056
Microstrip Microstrip Microstrip Microstrip Microstrip x 0.056 Taper Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13* Z14 PCB
0.040 x 0.061 Microstrip 0.020 x 0.050 Microstrip 0.050 x 0.050 Microstrip 0.050 x 0.027 Microstrip 0.338 x 0.020 Microstrip 1.551 x 0.027 Microstrip Rogers R04350B, 0.0133, r = 3.48
* Line length includes microstrip bends
Figure 1. MW7IC2425NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 1. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps PAE PAR ACPR IRL 25.5 15 -- -- -- 28.5 17 9 - 50 - 15 30.5 -- -- - 46 - 10 dB % dB dBc dB (continued)
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 RF Device Data Freescale Semiconductor 19
APPENDIX A MW7IC2425NR1/GNR1/NBR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA (continued)
Table 1. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Stage 1 - On Characteristics Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 77 mA) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test) Stage 2 - On Characteristics Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 275 mAdc) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test) VGS(Q) VGG(Q) -- 11 2.7 14 -- 18 Vdc Vdc VGS(Q) VGG(Q) -- 12.5 2.7 15.8 -- 19.5 Vdc Vdc Symbol Min Typ Max Unit
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case (Case Temperature 81C, Pout = 25 W CW) Stage 1, 28 Vdc, IDQ1 = 77 mA Stage 2, 28 Vdc, IDQ2 = 275 mA Symbol RJC Value 5.5 1.3 Unit C/W
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 20 RF Device Data Freescale Semiconductor
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MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
Document Number: RF Device Data MW7IC2425N Rev. 0, 3/2009 Freescale Semiconductor
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